to-220-3l plastic-encapsulate diodes mbr3030ct, 35ct, 40ct, 45ct, 50ct, 60ct schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value symbol parameter mbr 3030ct mbr 3035ct mbr 3040ct mbr 3045ct mbr 3050ct mbr 3060ct unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 60 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 42 v i o average rectified output current@ t c =100 30 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 200 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 to-220-3l 1. anode 2. cathode 3. a node 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symbol device test conditions min typ max unit mbr3030ct 30 mbr3035ct 35 mbr3040ct 40 mbr3045ct 45 MBR3050CT 50 reverse voltage v (br) mbr3060ct i r =1ma 60 v mbr3030ct v r =30v mbr3035ct v r =35v mbr3040ct v r =40v mbr3045ct v r =45v MBR3050CT v r =50v reverse current i r mbr3060ct v r =60v 0.2 ma mbr3030ct-3045ct 0.7 v f1 MBR3050CT,3060ct i f =15a 0.8 v mbr3030ct-3045ct 0.84 forward voltage v f2 * MBR3050CT,3060ct i f =30a 0.95 v mbr3030ct-3045ct 450 typical total capacitance c tot MBR3050CT,3060ct v r =4v,f=1mhz 400 pf *pulse test: pulse width 300 s, duty cycle 2.0%. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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